DATASHEET
ISL70024SEH, ISL73024SEH
200V, 7.5A Enhancement Mode GaN Power Transistor
FN8976 Rev.5.00 Aug 16, 2019
The ISL70024SEH and ISL73024SEH are 200V N-channel enhancement mode GaN power transistors. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for th...
