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PFF60R360 Dataheets PDF



Part Number PFF60R360
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Description N-Channel Super Junction MOSFET
Datasheet PFF60R360 DatasheetPFF60R360 Datasheet (PDF)

PFP60R360 / PFF60R360 PFP60R360 / PFF60R360 N-Channel Super Junction MOSFET FEATURES  New technology for high voltage device  Low RDS(on) low conduction losses  Small package  Ultra low gate charge cause lower driving requirement  100% avalanche tested  RoHS APPLICATION  Power Factor Correction(PFC)  Switched mode power supply (SMPS)  Uninterruptible Power Supply (UPS) BVDSS = 600 V RDS(on) = 0.30 Ω ID = 11.0 A Drain  Gate  ● ◀▲ ● ●  Source TO-220 TO-220F G DS G DS Absolut.

  PFF60R360   PFF60R360



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PFP60R360 / PFF60R360 PFP60R360 / PFF60R360 N-Channel Super Junction MOSFET FEATURES  New technology for high voltage device  Low RDS(on) low conduction losses  Small package  Ultra low gate charge cause lower driving requirement  100% avalanche tested  RoHS APPLICATION  Power Factor Correction(PFC)  Switched mode power supply (SMPS)  Uninterruptible Power Supply (UPS) BVDSS = 600 V RDS(on) = 0.30 Ω ID = 11.0 A Drain  Gate  ● ◀▲ ● ●  Source TO-220 TO-220F G DS G DS Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter PFP60R360 PFF60R360 VDS ID IDM(pulse) VGS Drain-Source Voltage (VGS=0V) Drain Current – Continuous (TC = 25℃) Drain Current – Continuous (TC = 100℃) Drain Current – Pulsed * Note 1 Gate-Source Voltage (VDS=0V) 600 11.0 11.0* 7.0 7.0* 33 33* ±30 EAS Single Pulsed Avalanche Energy * Note 2 280 IAR Avalanche Current * Note 1 5.5 EAR dv/dt PD TJ, TSTG Repetitive.


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