Document
PFP60R360 / PFF60R360
PFP60R360 / PFF60R360
N-Channel Super Junction MOSFET
FEATURES
New technology for high voltage device Low RDS(on) low conduction losses Small package Ultra low gate charge cause lower driving requirement 100% avalanche tested RoHS
APPLICATION
Power Factor Correction(PFC) Switched mode power supply (SMPS) Uninterruptible Power Supply (UPS)
BVDSS = 600 V RDS(on) = 0.30 Ω ID = 11.0 A
Drain
Gate
●
◀▲
● ●
Source
TO-220
TO-220F
G DS
G DS
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
PFP60R360 PFF60R360
VDS
ID
IDM(pulse) VGS
Drain-Source Voltage (VGS=0V)
Drain Current
– Continuous (TC = 25℃)
Drain Current
– Continuous (TC = 100℃)
Drain Current
– Pulsed
* Note 1
Gate-Source Voltage (VDS=0V)
600 11.0 11.0* 7.0 7.0* 33 33*
±30
EAS
Single Pulsed Avalanche Energy
* Note 2
280
IAR Avalanche Current
* Note 1
5.5
EAR dv/dt
PD TJ, TSTG
Repetitive.