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Junction MOSFET. PFF2N60 Datasheet

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Junction MOSFET. PFF2N60 Datasheet






PFF2N60 MOSFET. Datasheet pdf. Equivalent




PFF2N60 MOSFET. Datasheet pdf. Equivalent





Part

PFF2N60

Description

N-Channel Super Junction MOSFET



Feature


Aug 2006 PFP2N60 / PFF2N60 FEATURES ï ± Originative New Design  100% EAS T est  Rugged Gate Oxide Technology ï ± Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristic s  Unequalled Gate Charge : 9.5 nC ( Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 4.0 Ω (Typ.) @VGS= 10V APPLICATION  High current, High speed switching  Suitable for power .
Manufacture

Wing On

Datasheet
Download PFF2N60 Datasheet


Wing On PFF2N60

PFF2N60; supplies, adaptors and PFC  SMPS (Swi tched Mode Power Supplies) PFP2N60 / P FF2N60 600V N-Channel MOSFET BVDSS = 6 00 V RDS(on) = 5.0 Ω ID = 2.0 A TO-220 Drain  Gate  ● ◀▲ ● ⠗  Source TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC= 25℃ unless otherwise specified Symbo l Parameter PFP2N60 PFF2N60 VDSS ID.


Wing On PFF2N60

IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current D rain Current – Continuous (TC = 25℠ƒ) – Continuous (TC = 100℃) – P ulsed (Note 1) Gate-Source Voltage S ingle Pulsed Avalanche .


Wing On PFF2N60

.

Part

PFF2N60

Description

N-Channel Super Junction MOSFET



Feature


Aug 2006 PFP2N60 / PFF2N60 FEATURES ï ± Originative New Design  100% EAS T est  Rugged Gate Oxide Technology ï ± Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristic s  Unequalled Gate Charge : 9.5 nC ( Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 4.0 Ω (Typ.) @VGS= 10V APPLICATION  High current, High speed switching  Suitable for power .
Manufacture

Wing On

Datasheet
Download PFF2N60 Datasheet




 PFF2N60
Aug 2006
FEATURES
 Originative New Design
 100% EAS Test
 Rugged Gate Oxide Technology
 Extremely Low Intrinsic Capacitances
 Remarkable Switching Characteristics
 Unequalled Gate Charge : 9.5 nC (Typ.)
 Extended Safe Operating Area
 Lower RDS(ON) : 4.0 Ω (Typ.) @VGS=10V
APPLICATION
 High current, High speed switching
 Suitable for power supplies, adaptors and PFC
 SMPS (Switched Mode Power Supplies)
PFP2N60 / PFF2N60
600V N-Channel MOSFET
BVDSS = 600 V
RDS(on) = 5.0 Ω
ID = 2.0 A
TO-220
Drain 
Gate

●
◀▲
●
●
 Source
TO-220F
1
2
3
1.Gate 2. Drain 3. Source
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
PFP2N60
PFF2N60
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25℃)
- Derate above 25℃
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Drain current limited by maximum junction temperature
600
2.0 2.0*
1.3 1.3*
6 6*
±30
120
2.0
5.4
5.5
54 23
0.43 0.18
-55 to +150
300
Thermal Resistance Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
PFP2N60
2.32
0.5
62.5
PFF2N60
5.5
--
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
℃
Units
℃/W
Aug 2006
Wing On STS REV.A0




 PFF2N60
Electrical Characteristics TC=25 C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 ㎂
VGS = 10 V, ID = 1.0 A
2.0
--
Off Characteristics
BVDSS
ΔBVDSS
/ΔTJ
IDSS
IGSSF
IGSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
VGS = 0 V, ID = 250 ㎂
ID = 250 ㎂, Referenced to25℃
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125℃
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
600
--
--
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 300 V, ID = 2.0 A,
RG = 25 Ω
(Note 4,5)
VDS = 480 V, ID = 2.0 A,
VGS = 10 V
(Note 4,5)
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 2.0 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 2.0 A, VGS = 0 V
diF/dt = 100 A/μs (Note 4)
--
--
--
--
--
Typ Max Units
-- 4.0
4.0 5.0
V
Ω
-- -- V
0.6 -- V/℃
-- 1 ㎂
-- 10 ㎂
-- 100 ㎁
-- -100 ㎁
320 420
35 46
4.5 6.0
㎊
㎊
㎊
8 30 ㎱
23 60 ㎱
25 60 ㎱
28 70 ㎱
9.5 13 nC
1.6 -- nC
4.0 -- nC
-- 2.0
-- 6
-- 1.5
230 --
1.0 --
A
V
㎱
μC
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. IAS=2.0A, VDD=50V, RG=25, Starting TJ =25C
3. ISD≤2.0A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 C
4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature
Aug 2006
Wing On STS REV.A0




 PFF2N60
Typical Characteristics
Top :
VGS
15.0 V
10.0 V
8.0 V
7.0 V
100 6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
10-1
10-2
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100 101
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
18
15
V = 10V
GS
12
VGS = 20V
9
6
3
※ Note : TJ = 25℃
0
0123456
ID, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
600
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
C =C
rss gd
400 Ciss
200
0
10-1
Coss
※ Notes :
C
1. V = 0 V
GS
rss 2. f = 1 MHz
100 101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
Aug 2006
100 150oC
10-1
2
25oC
-55oC
※ Notes :
1. VDS = 40V
2. 250μ s Pulse Test
468
VGS, Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
100
10-1
0.2
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
0.4 0.6 0.8 1.0 1.2
VSD, Source-Drain voltage [V]
1.4
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10 VDS = 120V
VDS = 300V
8
VDS = 480V
6
4
2
※ Note : I = 2.0 A
D
0
0 2 4 6 8 10
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Wing On STS REV.A0



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