N-Channel Super Junction MOSFET
PFP15T110 / PFB15T110
FEATURES
100% EAS Test Super high density cell design Extremely Low Intrinsic Capacitances ...
Description
PFP15T110 / PFB15T110
FEATURES
100% EAS Test Super high density cell design Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Extended Safe Operating Area Lower RDS(ON) : 8.2 mΩ (Typ.) @VGS=10V
APPLICATION
DC Motor control for E-bike & Power tools Amplifier and car booster Load Switch DC-DC converters
PFP15T110 / PFB15T110
150V N-Channel MOSFET
BVDSS = 150 V RDS(on) = 8.2 mΩ ID = 110 A
Drain
Gate
●
◀▲
● ●
Source
TO-220
1 2 3
1.Gate 2. Drain 3. Source
D2-PAK
2
1 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings Tj=25℃ unless otherwise specified
Symbol VDSS VGSS
ID
IDM EAS
PD
RθJC TJ, TSTG TL
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current (TC = 25℃) Continuous Drain Current (TC = 100℃) Pulsed Drain Current
Single Pulsed Avalanche Energy Maximum Power Dissipation (TC = 25℃) Maximum Power Dissipation (TC = 70℃) Thermal Resistance, Junction-to-Case
Op...
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