PFF65T260

PFP65T260 / PFF65T260 PFP65T260/PFF65T260 N-Channel Super Junction MOSFET FEATURES  New technology for high voltage device  Low RDS(on) low conduction losses  Small package  Ultra low gate charge cause lower driving requirement  100% avalanche tested  RoHS compliant BVDSS = 650 V RDS(on) = 0.22 Ω ID = 15 A APPLICATION  Power Factor Correction(PFC)  Switched mode power supply (SMPS)  Uninterruptible Power Supply (UPS) TO-220 G D S Drain  Gate  ● ◀▲ ● ●  Source TO-220F G D S Absolute Maximum Ratings TC=25oC unless otherwise specified Symbol Parameter VDS Drain-Source Voltage (VGS=0V) Drain Current – Continuous (TC = 25oC) ID Drain Current – Continuous (TC = 100oC) IDM(pulse) Drain Current – Pulsed * Note 1 VGS Gate-Source Voltage (VDS=0V) EAS Single Pulsed Avalanche Energy * Note 2 IAR Avalanche Current * Note 1 EAR Repetitive Avalanche Energy * Note 1 dv/dt Drain Source Voltage Slope, VDS ≤ 480V Rev...