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PFP65R540 / PFF65R540
PFP65R540 / PFF65R540
N-Channel Super Junction MOSFET
FEATURES
New technology for high voltage device Low RDS(on) low conduction losses Small package Ultra low gate charge cause lower driving requirement 100% avalanche tested RoHS
APPLICATION
Power Factor Correction(PFC) Switched mode power supply (SMPS) Uninterruptible Power Supply (UPS)
BVDSS = 650 V RDS(on) = 0.48 Ω ID = 8.0 A
Drain
Gate
●
◀▲
● ●
Source
TO-220
TO-220F
G DS
G DS
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
PFP65R540 PFF65R540
VDS
ID
IDM(pulse) VGS
Drain-Source Voltage (VGS=0V)
Drain Current
– Continuous (TC = 25℃)
Drain Current
– Continuous (TC = 100℃)
Drain Current
– Pulsed
* Note 1
Gate-Source Voltage (VDS=0V)
650 8.0 8.0* 5.2 5.2* 24 24*
±30
EAS
Single Pulsed Avalanche Energy
* Note 2
185
IAR Avalanche Current
* Note 1
4.0
EAR dv/dt
PD TJ, TSTG
Repetitive Av.