N-Channel Super Junction MOSFET
PFP70R900 / PFF70R900
FEATURES
New technology for high voltage device Low RDS(on) low conduction losses Small pac...
Description
PFP70R900 / PFF70R900
FEATURES
New technology for high voltage device Low RDS(on) low conduction losses Small package Ultra low gate charge cause lower driving requirement 100% avalanche tested RoHS
APPLICATION
Power Factor Correction(PFC) Switched mode power supply (SMPS) Uninterruptible Power Supply (UPS)
PFP70R900 / PFF70R900
N-Channel Super Junction MOSFET
BVDSS = 700 V RDS(on) = 0.78 Ω ID = 5.0 A
TO-220
Drain
Gate
●
◀▲
● ●
Source
TO-220F
G DS
G DS
Absolute Maximum Ratings TC=25oC unless otherwise specified
Symbol
Parameter
VDS Drain-Source Voltage (VGS=0V)
Drain Current
– Continuous (TC = 25oC)
ID
Drain Current
– Continuous (TC = 100oC)
IDM(pulse)
Drain Current
– Pulsed
* Note 1
VGS Gate-Source Voltage (VDS=0V)
EAS
Single Pulsed Avalanche Energy
* Note 2
IAR Avalanche Current
* Note 1
EAR
Repetitive Avalanche Energy
* Note 1
dv/dt PD
Drain Source Voltage Slope, VDS ≤ 480V
Reverse Di...
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