PFD65R540G

PFU65R540G / PFD65R540G Green Package PFU65R540G / PFD65R540G N-Channel Super Junction MOSFET FEATURES  New technology for high voltage device  Low RDS(on) low conduction losses  Small package  Ultra low gate charge cause lower driving requirement  100% avalanche tested  Halogen Free APPLICATION  Power Factor Correction(PFC)  Switch mode power supply (SMPS)  Uninterruptible Power Supply (UPS) BVDSS = 650 V RDS(on)= 0.48 Ω ID = 8.0 A I-PAK(TO-251) G D S Drain  Gate  ● ◀▲ ● ●  Source D-PAK(TO-252) G S D Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDS ID IDM(pulse) VGS Drain-Source Voltage (VGS=0V) Drain Current – Continuous (TC = 25℃) Drain Current – Continuous (TC = 100℃) Drain Current – Pulsed * Note 1 Gate-Source Voltage (VDS=0V) 650 8.0 5.2 24 ±30 EAS Single Pulsed Avalanche Energy * Note 2 185 IAR Avalanche Current * Note 1 4.0 EAR dv/dt PD TJ, TSTG Repe...