N-Channel Super Junction MOSFET
PFP60R180 / PFF60R180
PFP60R180 / PFF60R180
N-Channel Super Junction MOSFET
FEATURES
New technology for high voltage...
Description
PFP60R180 / PFF60R180
PFP60R180 / PFF60R180
N-Channel Super Junction MOSFET
FEATURES
New technology for high voltage device Low RDS(on) low conduction losses Small package Ultra low gate charge cause lower driving requirement 100% avalanche tested RoHS
APPLICATION
Power Factor Correction(PFC) Switched mode power supply (SMPS) Uninterruptible Power Supply (UPS)
BVDSS = 600 V RDS(on) = 0.15 Ω ID = 21 A
TO-220
G DS
Drain
Gate
●
◀▲
● ●
Source
TO-220F
G DS
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
PFP60R1 8 0 PFF60R1 8 0
VDS
ID
IDM(pulse) VGS
Drain-Source Voltage (VGS=0V)
Drain Current
– Continuous (TC = 25℃)
Drain Current
– Continuous (TC = 100℃)
Drain Current
– Pulsed
* Note 1
Gate-Source Voltage (VDS=0V)
600 21 13.2 63
±30
21* 13.2* 63*
EAS
Single Pulsed Avalanche Energy
* Note 2
690
IAR Avalanche Current
* Note 1
7.0
EAR dv/dt
PD TJ, TSTG
Repetitive ...
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