MDE9754

MDE9754– Dual Enhancement N-P Channel Trench MOSFET MDE9754 Dual Enhancement N-P Channel Trench MOSFET General Description Features The MDE9754 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in on-state resistance, switching performance and reliability. Low RDS(ON), low gate charge can be offering superior benefit in the application. N-Channel VDS = 40V ID = 23A @ VGS = 10V RDS(ON) <27mΩ @ VGS = 10V <35mΩ @ VGS = 4.5V Applications P-Channel VDS = -40V ID = -24.6A@ VGS = -10V RDS(ON) <43mΩ @ VGS = -10V <58mΩ @ VGS = -4.5V Inverters General purpose applications D1 D2 1(S1) 2(G1) 3(D1/D2) 4(S2) 5(G2) D2-PAK-5L G1 G2 S1 S2 Absolute Maximum Ratings (TC =25oC unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation for Single Operation (Note 2) Junction and Storage Temperature Range TC=25oC TC=100oC TC=25oC TC=100oC Symbol VDSS VGSS ID IDM PD ...