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SPN9926B Dataheets PDF



Part Number SPN9926B
Manufacturers SYNC POWER
Logo SYNC POWER
Description N-channel MOSFET
Datasheet SPN9926B DatasheetSPN9926B Datasheet (PDF)

SPN9926B N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN9926B is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES  20V/6.0A,RDS(ON)=33mΩ@VGS=4.5V  .

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SPN9926B N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN9926B is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES  20V/6.0A,RDS(ON)=33mΩ@VGS=4.5V  20V/5.0A,RDS(ON)=38mΩ@VGS=2.5V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability  SOP–8 package design APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter PIN CONFIGURATION(SOP–8) PART MARKING 2020/03/05 Ver.3 Page 1 SPN9926B N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D2 D2 D1 D1 Description Source 1 Gate 1 Source 2 Gate 2 Drain 2 Drain 2 Drain 1 Drain 1 ORDERING INFORMATION Part Number Package SPN9926BS8RGB SOP-8 ※ SPN9926BS8RGB : 13” Tape Reel ; Pb – Free ; Halogen – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ Continuous Source Current(Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA Part Marking SPN9926B Typical 20 ±12 6.8 4.8 30 1.6 2.8 1.8 -55/150 -55/150 105 Unit V V A A A W ℃ ℃ ℃/W 2020/03/05 Ver.3 Page 2 SPN9926B N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA IGSS VDS=0V,VGS=±12V VDS=20V,VGS=0V IDSS VDS=20V,VGS=0V TJ=55℃ ID(on) VDS≦5V,VGS=4.5V RDS(on) VGS=4.5V,ID=6.0A VGS=2.5V,ID=5.0A gfs VDS=5V,ID=-3.6A VSD IS=1.7A,VGS=0V Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDS=10V, VGS=4.5V, ID=6.0A VDS=8V,VGS=0V f=1MHz VDD=10V,RL=6Ω ID≡1.0A,VGEN=4.5V RG=6Ω Min. Typ Max. Unit 20 V 0.5 1.0 ±100 nA 1 uA 5 6 A 0.028 0.033 0.032 0.038 Ω 10 S 0.8 1.2 V 2 2.5 nC 2.1 575 84 pF 22 10 14 16 20 nS 35 40 3 10 2020/03/05 Ver.3 Page 3 SPN9926B N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2020/03/05 Ver.3 Page 4 SPN9926B N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2020/03/05 Ver.3 Page 5 SPN9926B N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2020/03/05 Ver.3 Page 6 SPN9926B N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. © The SYNC Power logo is a registered trademark of SYNC Power Corporation © 2020 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 © http://www.syncpower.com 2020/03/05 Ver.3 Page 7 .


PI3L720 SPN9926B EMA2001


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