Document
SPN9926B
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN9926B is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES 20V/6.0A,RDS(ON)=33mΩ@VGS=4.5V 20V/5.0A,RDS(ON)=38mΩ@VGS=2.5V Super high density cell design for extremely low
RDS(ON) Exceptional on-resistance and maximum DC
current capability SOP–8 package design
APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter
PIN CONFIGURATION(SOP–8)
PART MARKING
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SPN9926B
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8
Symbol S1 G1 S2 G2 D2 D2 D1 D1
Description Source 1 Gate 1 Source 2 Gate 2 Drain 2 Drain 2 Drain 1 Drain 1
ORDERING INFORMATION
Part Number
Package
SPN9926BS8RGB
SOP-8
※ SPN9926BS8RGB : 13” Tape Reel ; Pb – Free ; Halogen – Free
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current
TA=25℃ TA=70℃
Continuous Source Current(Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operating Junction Temperature
Storage Temperature Range Thermal Resistance-Junction to Ambient
Symbol VDSS VGSS ID
IDM IS
PD TJ TSTG RθJA
Part Marking SPN9926B
Typical 20
±12 6.8 4.8 30
1.6 2.8 1.8 -55/150 -55/150 105
Unit V V
A
A A
W ℃ ℃ ℃/W
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SPN9926B
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±12V
VDS=20V,VGS=0V IDSS VDS=20V,VGS=0V
TJ=55℃
ID(on) VDS≦5V,VGS=4.5V
RDS(on)
VGS=4.5V,ID=6.0A VGS=2.5V,ID=5.0A
gfs VDS=5V,ID=-3.6A
VSD IS=1.7A,VGS=0V
Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf
VDS=10V, VGS=4.5V, ID=6.0A
VDS=8V,VGS=0V f=1MHz
VDD=10V,RL=6Ω ID≡1.0A,VGEN=4.5V RG=6Ω
Min. Typ Max. Unit
20
V
0.5
1.0
±100 nA
1 uA
5
6
A
0.028 0.033 0.032 0.038
Ω
10
S
0.8 1.2 V
2
2.5
nC
2.1
575
84
pF
22
10
14
16
20
nS
35
40
3
10
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SPN9926B
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPN9926B
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPN9926B
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPN9926B
N-Channel Enhancement Mode MOSFET
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