808nm High-Power Laser Diode
808 nm High-Power Laser Diode (AL808T1000)
Features:
Output power: 1w(CW) Variety of stripe width Efficient quantum well...
Description
808 nm High-Power Laser Diode (AL808T1000)
Features:
Output power: 1w(CW) Variety of stripe width Efficient quantum well structure
Application:
Solid-state laser pumping Medical usage Beacons and Illumination Free-space communication Infrared light sources
Specifications:
Parameter
CW output power (mW) Peak wavelength (nm) Spectral width (nm) Threshold current (A) Operating current (mA) Operating voltage (V) Slope efficiency (W/A) Beam divergence θ⊥×θ∥ (deg.) Wavelength temperature coefficient (nm/℃)
Emitting area (μm) Serial resistance (Ω)
Lifetime(h) Package
Value AL808T1000
1000 808±5
≤5 ≤200 ≤1200 1.8~2.2 ≥0.9 12/40
0.3 100×1 ≤1.5 10000
TO-5
TO-5 Package:(Unit: mm) TO3 Packing
C-block Heat Sink:(Unit : mm,Heat Sink(+)) C-block (C)
...
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