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AL808T1000

ETC

808nm High-Power Laser Diode

808 nm High-Power Laser Diode (AL808T1000) Features: Output power: 1w(CW) Variety of stripe width Efficient quantum well...


ETC

AL808T1000

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Description
808 nm High-Power Laser Diode (AL808T1000) Features: Output power: 1w(CW) Variety of stripe width Efficient quantum well structure Application: Solid-state laser pumping Medical usage Beacons and Illumination Free-space communication Infrared light sources Specifications: Parameter CW output power (mW) Peak wavelength (nm) Spectral width (nm) Threshold current (A) Operating current (mA) Operating voltage (V) Slope efficiency (W/A) Beam divergence θ⊥×θ∥ (deg.) Wavelength temperature coefficient (nm/℃) Emitting area (μm) Serial resistance (Ω) Lifetime(h) Package Value AL808T1000 1000 808±5 ≤5 ≤200 ≤1200 1.8~2.2 ≥0.9 12/40 0.3 100×1 ≤1.5 10000 TO-5 TO-5 Package:(Unit: mm) TO3 Packing C-block Heat Sink:(Unit : mm,Heat Sink(+)) C-block (C) ...




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