PHE13005X

PHE13005X Silicon diffused power transistor Rev.03 - 26 April 2018 Product data sheet 1. General description High-voltage, high-speed planar-passivated, NPN power switching transistor in SOT186A (TO-220F) plastic package for use in high frequency electronic lighting ballast applications 2. Features and benefits Fast switching High voltage capability of 700 V Low thermal resistance Isolated package 3. Applications Electronic lighting ballasts 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating VCESM collector-emitter peak voltage IC collector current Ptot total power dissipation Symbol Parameter Static characteristics hFE DC current gain Conditions VBE = 0 V DC; Fig. 1; Fig. 2; Fig. 3 Th ≤ 25 °C; Fig. 4 Conditions IC = 1 A; VCE = 5 V; Th = 25 °C; Fig. 11 IC = 2 A; VCE = 5 V; Th = 25 °C; Fig. 11 Values Unit 700 V 4 26 Min Typ A W Max Unit 12 20 40 10 17 28 WeEn Semiconductors 5. Pinning information ...