PHE13005

PHE13005 Silicon diffused power transistor Rev.01 - 30 March 2018 Product data sheet 1. General description High voltage, high speed NPN planar-passivated power switching transistor in a SOT78 plastic package intended for use in high frequency electronic lighting ballast applications 2. Features and benefits Fast switching High voltage capability of 700 V Low thermal resistance 3. Applications Electronic lighting ballasts 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating VCESM peak collector-emitter voltage IC collector current (DC) Ptot total power dissipation Symbol Parameter Static characteristics hFE DC current gain Conditions VBE = 0 V DC; Fig. 1; Fig. 2; Fig. 4 Tmb ≤ 25 °C; Fig. 3 Conditions IC = 1 A; VCE = 5 V; Tmb = 25 °C; Fig. 11 IC = 2 A; VCE = 5 V; Tmb = 25 °C; Fig. 11 Values Unit 700 V 4 75 Min Typ A W Max Unit 12 20 40 10 17 28 WeEn Semiconductors PHE13005 Silicon diffused power transi...