N-Channel MOSFET
HY3506P/B
N-Channel Enhancement Mode MOSFET
Features
• 60V/190A
RDS(ON) = 3.5 m(typ.) @ VGS=10V
• 100% avalanche tes...
Description
HY3506P/B
N-Channel Enhancement Mode MOSFET
Features
60V/190A
RDS(ON) = 3.5 m(typ.) @ VGS=10V
100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
DS G TO-220FB-3L
G DS TO-263-2L
Applications
Switching application Power Management for Inverter Systems.
Ordering and Marking Information
N-Channel MOSFET
P HY3506
YYXXXJWW G
B HY3506
YYXXXJWW G
Package Code
P : TO-220FB-3L
Date Code YYXXX WW
B: TO-263-2L
Assembly Material G : Lead Free Device
Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish;which are fully compliant with RoHS. HUAYI lead -free products meet or exceed the leadFree requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material...
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