HYG046N04LQ1V

HYG046N04LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature  40V/75A RDS(ON)= 4.4mΩ(typ.)@VGS = 10V RDS(ON)= 6.1mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen Free and Green Devices Available (RoHS Compliant) Pin Description GDS TO-252-2L GDS GDS TO-251-3L TO-251-3S Applications  Switching Application  Power Management for DC/DC  Battery Protection Ordering and Marking Information N-Channel MOSFET D G046N04L XXXYWXXXXX U G046N04L XXXYWXXXXX V G046N04L XXXYWXXXXX Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S Date Code XXXYWXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl...