HYG023N03LR1C2

HYG023N03LR1C2 Single N-Channel Enhancement Mode MOSFET Feature Description  30V/125A RDS(ON)= 1.5mΩ (typ.) @VGS = 10V RDS(ON)= 2.1mΩ (typ.) @VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen- Free Devices Available Pin Description DDDD DDDD SSSG GSSS Pin1 PPAK5*6-8L Applications  Switching Application  Power Management for DC/DC  Battery Protection Single N-Channel MOSFET Ordering and Marking Information C2 G023N03 XYMXXXXXX Package Code C2: PPAK5*6-8L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termi- Nation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require- ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and tota...