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HYG065P03LQ1U

P-Channel MOSFET

Description

HYG065P03LQ1 D/U/V P-Channel Enhancement Mode MOSFET Feature  -30V/-70A RDS(ON)= 5.9mΩ(typ.) @VGS = -10V RDS(ON)= 9.1mΩ(typ.) @VGS = -4.5V  100% avalanche tested  Reliable and Rugged  Halogen Free and Green Devices Available (RoHS Compliant) Pin Description GDS GDS GDS TO-252-2L TO-251-3L TO-251-3S Applications  Power Management in DC/DC conver...

HUAYI

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