HYG800P10LR1D

HYG800P10LR1D/U/V P-Channel Enhancement Mode MOSFET Feature  -100V/-20A RDS(ON)= 77mΩ(typ.) @ VGS = -10V RDS(ON)= 86mΩ(typ.) @ VGS = -4.5V  100% avalanche tested  Reliable and Rugged  Halogen Free and Green Devices Available (RoHS Compliant) Pin Description TO-252-2L TO-251-3L TO-251-3S Applications  Power Management in DC/DC converter.  Load switching. Ordering and Marking Information D G800P10 XYMXXXXXX U G800P10 XYMXXXXXX V G800P10 XYMXXXXXX Package Code D: TO-252-2L V: TO-251-3S Date Code XYMXXXXXX P-Channel MOSFET U: TO-251-3L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight ...