Dual 30V P-Channel PowerTrench MOSFET
FDS4935
June 2001
FDS4935
Dual 30V P-Channel PowerTrench MOSFET
General Description
This P-Channel MOSFET is a rugge...
Description
FDS4935
June 2001
FDS4935
Dual 30V P-Channel PowerTrench MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).
Applications
Power management Load switch Battery protection
Features
–7 A, –30 V
RDS(ON) = 23 mΩ @ VGS = –10 V RDS(ON) = 35 mΩ @ VGS = –4.5 V
Low gate charge (15nC typical)
Fast switching speed
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
DD1DD1 DD2 DD2
SO-8
Pin 1 SO-8
SS2GS2SS1GG1
5 6 Q1 7
Q2
8
4 3 2 1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS VGSS ID
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous
– Pulsed
(Note 1a)
PD Power Dissipation for Dual Operation
PD
Power Dissipation for Single ...
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