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PESD12VL2BT-N

BORN

ESD Protection Diode Array

»Features ■ 350 Watts peak pulse power (tp =8/20μs) ■ Bidirectional configurations ■ Solid-state silicon-avalanche techn...


BORN

PESD12VL2BT-N

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»Features ■ 350 Watts peak pulse power (tp =8/20μs) ■ Bidirectional configurations ■ Solid-state silicon-avalanche technology ■ Low clamping voltage ■ Low leakage current ■ IEC 61000-4-2 ±30kV contact ±30kVair ■ IEC 61000-4-4 (EFT) 40A(5/50ns) ■ IEC 61000-4-5 (Lightning) 12A(8/20μs) PESD12VL2BT-N ESD Protection Diode Array »Applications ■ Dataline ■ Automatic Teller Machines ■ Net works ■ Power line »Mechanical Data ■ SOT-23 package ■ Molding compound flammability rating: UL 94V-0 ■ Packaging: Tape and Reel ■ RoHS/WEEE Compliant »Schematic & PIN Configuration 1 2 Revision 2018 1 33 2 SOT-23 (Top View) www.born-tw.com 1 /4 PESD12VL2BT-N »Absolute Maximum Rating Rating Peak Pulse Power ( tp =8/20μs ) Peak Pulse Current ( tp =8/20μs )(note1) ESD per IEC 61000-4-2(Air) ESD per IEC 61000-4-2 (Contact) Lead SolderingTemperature Junction Temperature Storage Temperature Symbol PPP Ipp VESD TL TJ Tstg Value 350 12 30 30 260(10seconds) -55 to...




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