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HP50N06 Dataheets PDF



Part Number HP50N06
Manufacturers SEMIHOW
Logo SEMIHOW
Description 60V N-Channel MOSFET
Datasheet HP50N06 DatasheetHP50N06 Datasheet (PDF)

HP50N06 July 2005 HP50N06 60V N-Channel MOSFET BVDSS = 60 V RDS(on) = 23 mΩ ID = 50 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 40 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.023 Ω (Typ.) @VGS=10V ‰ 100% Avalanche Tested TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specifie.

  HP50N06   HP50N06


M0517LBN HP50N06 RDL3081


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