CMD219

CMD219 4-8 GHz GaN Low Noise Amplifier Features ► High gain ► Low noise figure ► High linearity ► High RF power survivability ► Small die size Description The CMD219 is a broadband MMIC GaN low noise amplifier ideally suited for microwave radios and C-band applications where small size and high input power survivability are needed. The broadband device delivers greater than 23 dB of gain with a corresponding output 1 dB compression point of +18 dBm and a noise figure of 1 dB. The CMD219 features a RF input power survivability of greater than 5 Watts. The CMD219 is a 50 ohm matched design eliminating the need for external DC blocks and RF port matching. Functional Block Diagram 1 RFIN 4Vgg 2Vdd 3RFOUT Electrical Performance - Vdd = 10 V, Vgg = -2.3 V, TA = 25 oC, F = 6 GHz Parameter Min Typ Max Frequency Range 4-8 Gain 23 Noise Figure 1 Output P1dB 18 Output Psat 26 Output IP3 28 Input Return Loss 15 Output Return Loss 10 Supply Current 75 Units GHz ...