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HMMC-5620 Dataheets PDF



Part Number HMMC-5620
Manufacturers HP
Logo HP
Description 6-20 GHz High-Gain Amplifier
Datasheet HMMC-5620 DatasheetHMMC-5620 Datasheet (PDF)

6 – 20 GHz High-Gain Amplifier Technical Data HMMC-5620 Features • Wide-Frequency Range: 6 – 20 GHz • High Gain: 17 dB • Gain Flatness: ± 1.0 dB • Return Loss: Input -15 dB Output -15 dB • Single Bias Supply Operation • Low DC Power Dissipation: PDC ~ 0.5 Watts • Medium Power: 20 GHz: P-1dB: 12 dBm Psat: 13 dBm Description The HMMC-5620 is a wideband GaAs MMIC Amplifier designed for medium output power and high gain over the 6 to 20 GHz frequency range. Four MESFET cascade stages provide high .

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6 – 20 GHz High-Gain Amplifier Technical Data HMMC-5620 Features • Wide-Frequency Range: 6 – 20 GHz • High Gain: 17 dB • Gain Flatness: ± 1.0 dB • Return Loss: Input -15 dB Output -15 dB • Single Bias Supply Operation • Low DC Power Dissipation: PDC ~ 0.5 Watts • Medium Power: 20 GHz: P-1dB: 12 dBm Psat: 13 dBm Description The HMMC-5620 is a wideband GaAs MMIC Amplifier designed for medium output power and high gain over the 6 to 20 GHz frequency range. Four MESFET cascade stages provide high gain, while the single bias supply offers ease of use. E-Beam lithography is used to produce gate lengths of ≈ 0.3 µm. The HMMC-5620 incorporates advanced MBE technology, Ti-Pt-Au gate metallization, silicon nitride passivation, and polyimide for scratch protection. Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: 1410 x 1010 µm (55.5 x 39.7 mils) ± 10µm (± 0.4mils) 127 ± 15 µm (5.0 ± 0.6 mils) 80 x 80 µm (2.95 x 2.95 mils), or larger Absolute Maxi.


HMMC-5620 HMMC-5620 1GG6-8070


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