Document
6 – 20 GHz High-Gain Amplifier Technical Data
HMMC-5620
Features
• Wide-Frequency Range: 6 – 20 GHz
• High Gain: 17 dB
• Gain Flatness: ± 1.0 dB
• Return Loss: Input -15 dB Output -15 dB
• Single Bias Supply Operation
• Low DC Power Dissipation: PDC ~ 0.5 Watts
• Medium Power: 20 GHz: P-1dB: 12 dBm Psat: 13 dBm
Description
The HMMC-5620 is a wideband GaAs MMIC Amplifier designed for medium output power and high gain over the 6 to 20 GHz frequency range. Four MESFET cascade stages provide high gain, while the single bias supply offers ease of use. E-Beam lithography is used to produce gate lengths of ≈ 0.3 µm. The HMMC-5620 incorporates advanced MBE technology, Ti-Pt-Au gate metallization, silicon nitride passivation, and polyimide for scratch protection.
Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions:
1410 x 1010 µm (55.5 x 39.7 mils) ± 10µm (± 0.4mils) 127 ± 15 µm (5.0 ± 0.6 mils) 80 x 80 µm (2.95 x 2.95 mils), or larger
Absolute Maxi.