K2698

Features ■ 18A,500V,RDS(on)(Max0.27Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 42nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) K2698 Silicon N-Channel MOSFET General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for AC-DC switching power supplies, DC-DC power Converters high voltage H-bridge motor drive PWM Absolute Maximum Ratings Symbol Parameter VDSS ID Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) IDM Drain Current Pulsed VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv /dt PD Total Power Dissipation(@Tc=25℃) TJ,Tstg Junction and Storage Temperature TL Channel Tem...