Features
� 10A,400V,RDS(on)(Max 0.55Ω)@VGS=10V � Ultra-low Gate Charge(Typical 60nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃)
WFP740
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especial...
