Dual N-Channel MOSFET
General Description
The WSP9926A is the highest performance trench N-ch MOSFET with extreme high cell density , which pr...
Description
General Description
The WSP9926A is the highest performance trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications.
The WSP9926A meet the RoHS and Green Product requirement with full function reliability approved.
Features
z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available
WSP9926A
Dual N-Channel MOSFET
Product Summery
BVDSS 20V
RDSON 20mΩ
ID 7.5A
Applications
z High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA
z Networking DC-DC Power System z ESD:2KV
SOP-8 Pin Configuration
Absolute Maximum Ratings
Symbol VDS VGS
ID@TA=25℃ ID@TA=70℃
IDM PD@TA=25℃
TSTG TJ
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V1 Continuous Drain Current, VGS @ 4.5V1 Pulsed Drain Current2 Total Power Dissipation3
Storage Temperature Range...
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