TMB120N10A

TMB120N10A Wuxi Unigroup Microelectronics Company 100V N-Channel Trench MOSFET FEATURES  High Density Cell Design for Ultra Low Rdson  Fully Characterized Avalanche Voltage and Current  Good Stability with High EAS  Excellent Package for Good Heat Dissipation APPLICATIONS  Power Switching Application  Hard Switched and High Frequency Circuits  Uninterruptible Power Supply Device Marking and Package Information Device Package TMB120N10A TO-263 Marking 120N10A Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Drain-Source Voltage (VGS = 0V) Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy Avalanche Current Power Dissipation (TC = 25ºC) Operating Junction and Storage Temperature Range (note1) (note2) (note1) VDSS ID IDM VGSS EAS IAR PD TJ, Tstg Value 100 110 440 ±20 1000 60 208 -55~+175 Unit V A A V mJ A W ºC Thermal Resistance Parameter Thermal Resistance, Junction-to-Case The...