TTD70N07A

TTD70N07A, TTP70N07A Wuxi Unigroup Microelectronics CO.,LTD. 70V N-Channel Trench MOSFET Features  Trench Power Technology  Low RDS(ON)  Low Gate Charge  Optimized for Fast-switching Applications Product Summary VDS RDS(ON) (at VGS=10V) ID (at VGS=10V) 70V < 10.8mΩ 70A Applications  Synchronous Rectification in DC/DC and AC/DC Converters  Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested Device TTD70N07A TTP70N07A Package TO-252 TO-220 Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Drain-Source Voltage (VGS = 0V) Continuous Drain Current Pulsed Drain Current TC = 25ºC TC = 100ºC Gate-Source Voltage Single Pulse Avalanche Energy Avalanche Current Power Dissipation (note3) TC = 25ºC TC = 100ºC Operating Junction and Storage Temperature Range Thermal Resistance (note1) (note2) VDSS ID IDM VGSS EAS IAs PD TJ, Tstg Parameter Symbol Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-...