TTJ06N04AT

TTJ06N04AT Wuxi Unigroup Microelectronics Company 40V N-Channel Trench MOSFET FEATURES  Trench Power MOSFET Technology  Low RDS(ON)  Low Gate Charge  Optimized for fast-switching applications APPLICATIONS  Synchronous Rectification in DC/DC and AC/DC Converters  Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Information Device Package Marking TTJ06N04AT SOP-8 06N04AT Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Drain-Source Voltage (VGS = 0V) Continuous Drain Current Pulsed Drain Current (note1) Gate-Source Voltage Single Pulse Avalanche Energy (note2) Avalanche Current Power Dissipation (TC = 25ºC) Operating Junction and Storage Temperature Range VDSS ID IDM VGSS EAS IAs PD TJ, Tstg 40 6 24 ±20 7.4 7 2 -55~+150 Thermal Resistance Parameter Thermal Resistance, Junction-to-Ambient Symbol RthJA Value 62.5 Unit V A A V mJ A W ºC Unit ºC/W V1.0 1 www.tsinghuaicwx.com TTJ0...