TTG120N03GT

TTG120N03GT Wuxi Unigroup Microelectronics Co.,Ltd 30V N-Channel Trench MOSFET FEATURES  Trench Power MOSFET Technology  Low RDS(ON)  Low Gate Charge  Optimized For Fast-switching Applications APPLICATIONS  Synchronous Rectification in DC/DC and AC/DC Converters  Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Information Device Package TTG120N03AT DFN5*6 Marking 120N03AT Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Drain-Source Voltage (VGS = 0V) Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy Avalanche Current Power Dissipation (TC = 25ºC) Operating Junction and Storage Temperature Range (note1) (note2) (note1) VDSS ID IDM VGSS EAS IAs PD TJ, Tstg Value 30 120 480 ±20 135 30 106 -55~+150 Thermal Resistance Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RthJC RthJA Value 1.18 60 Unit V A A V m...