TTP80N04AT

TTD80N04AT, TTP80N04AT Wuxi Unigroup Microelectronics Company 40V N-Channel Trench MOSFET FEATURES  Trench Power MOSFET Technology  Low RDS(ON)  Low Gate Charge  Optimized For Fast-switching Applications APPLICATIONS  Synchronous Rectification in DC/DC and AC/DC Converters  Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Information Device Package TTD80N04AT TO-252 TTP80N04AT TO-220 Marking 80N04AT 80N04AT Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value TO-252 TO-220 Drain-Source Voltage (VGS = 0V) Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy Avalanche Current Power Dissipation (TC = 25ºC) Operating Junction and Storage Temperature Range (note1) (note2) VDSS ID IDM VGSS EAS IAs PD TJ, Tstg 40 80 320 ±20 78 22 120 -55~+175 Unit V A A V mJ A W ºC Thermal Resistance Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, J...