TTE01P10AT

TTE01P10AT Wuxi Unigroup Microelectronics Company 100V P-Channel Trench MOSFET FEATURES  Trench Power MOSFET Technology  Low RDS(ON)  Low Gate Charge  Optimized For Fast-switching Applications APPLICATIONS  Load Switches  Battery Switch TO-251-SL Device Marking and Package Information Device Package TTE01P10AT TO-251-SL Marking 01P10AT Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Drain-Source Voltage (VGS = 0V) Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy Avalanche Current Power Dissipation (TC = 25ºC) Operating Junction and Storage Temperature Range (note1) (note2) (note1) VDSS ID IDM VGSS EAS IAR PD TJ, Tstg Value -100 -1.5 -6 ±20 0.8 -2 1.5 -55~+175 Unit V A A V mJ A W ºC Thermal Resistance Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RthJC RthJA Value 20 60 Unit K/W V1.0 1 www.tsinghuaicwx.com TTE01P10AT Wu...