TPV65R040M

TPV65R040M, TPW65R040M Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES  Very low FOM RDS(on)×Qg  100% avalanche tested  RoHS compliant APPLICATIONS  Switch Mode Power Supply (SMPS)  Uninterruptible Power Supply (UPS)  Power Factor Correction (PFC) Device Marking and Package Information Device TPV65R040M Package TO-3PN Marking 65R040M TPW65R040M TO-247 65R040M Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol TO-3PN Value TO-247 Drain-Source Voltage (VGS = 0V) Continuous Drain Current Pulsed Drain Current (note1) Gate-Source Voltage Single Pulse Avalanche Energy (note2) Avalanche Current (note1) Repetitive Avalanche Energy (note1) Power Dissipation (TC = 25ºC) Operating Junction and Storage Temperature Range VDSS ID IDM VGSS EAS IAR EAR PD TJ, Tstg 650 72 216 ±30 2185 13.7 3.31 500 -55~+150 Thermal Resistance Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junc...