TSB15N10A

TSB15N10A Wuxi Unigroup Microelectronics Company 100V N-Channel DTMOS FEATURES  Trench Power DTMOS technology  Low RDS(ON)  Low Gate Charge  Optimized for fast-switching applications APPLICATIONS  Synchronous Rectification in DC/DC and AC/DC Converters  Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Information Device Package Marking TSB15N10A TO-263 15N10A Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Drain-Source Voltage (VGS = 0V) Continuous Drain Current (Package Limited) Pulsed Drain Current (note1) Gate-Source Voltage Single Pulse Avalanche Energy (note2) Avalanche Current (note1) Power Dissipation (TC = 25ºC) Operating Junction and Storage Temperature Range VDSS ID IDM VGSS EAS IAS PD TJ, Tstg 100 150 600 ±20 609 28 208 -55~+150 Thermal Resistance Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RthJC RthJA Value 0.6 60 U...