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TMU7N55H Dataheets PDF



Part Number TMU7N55H
Manufacturers Unigroup
Logo Unigroup
Description N-Channel Trench MOSFET
Datasheet TMU7N55H DatasheetTMU7N55H Datasheet (PDF)

FEATURES  Fast switching  100% avalanche tested  Improved dv/dt capability TMA7N55H, TMD7N55H, TMP7N55H, TMU7N55H Wuxi Unigroup Microelectronics Company 550V N-Channel MOSFET APPLICATIONS  Switch Mode Power Supply (SMPS)  Uninterruptible Power Supply (UPS)  Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA7N55H TO-220F A7N55H TMD7N55H TO-252 D7N55H TMP7N55H TO-220 P7N55H TMU7N55H TO-251 U7N55H Absolute Maximum Ratings TC = 25.

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FEATURES  Fast switching  100% avalanche tested  Improved dv/dt capability TMA7N55H, TMD7N55H, TMP7N55H, TMU7N55H Wuxi Unigroup Microelectronics Company 550V N-Channel MOSFET APPLICATIONS  Switch Mode Power Supply (SMPS)  Uninterruptible Power Supply (UPS)  Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA7N55H TO-220F A7N55H TMD7N55H TO-252 D7N55H TMP7N55H TO-220 P7N55H TMU7N55H TO-251 U7N55H Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol TO-220F Value TO-252 TO-220 Drain-Source Voltage (VGS = 0V) Continuous Drain Current Pulsed Drain Current (note1) Gate-Source Voltage Single Pulse Avalanche Energy (note2) Avalanche Current (note1) Repetitive Avalanche Energy (note1) Power Dissipation (TC = 25ºC) Operating Junction and Storage Temperature Range VDSS ID IDM VGSS EAS IAR EAR PD TJ, Tstg 54 550 7 28 ±30 176 4.2 35 83 -55~+150 TO-251 Unit V A A V mJ A mJ W.


TMP7N55H TMU7N55H EM30719


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