OD-850W Datasheet: HIGH-POWER GaAlAs IR EMITTERS





OD-850W HIGH-POWER GaAlAs IR EMITTERS Datasheet

Part Number OD-850W
Description HIGH-POWER GaAlAs IR EMITTERS
Manufacture OPTO DIODE
Total Page 2 Pages
PDF Download Download OD-850W Datasheet PDF

Features: HIGH-POWER GaAlAs IR EMITTERS OD-850W F EATURES • High optical output • 850 nm peak emission • Hermetically seale d TO-46 package • Wide emision angle to cover a large area All surfaces are gold plated. Dimensions are nominal val ues in inches unless otherwise specifie d. Caps are welded to the case. RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25° C PARAMETERS TEST CONDITIONS Total P ower Output, Po Peak Emission Wavelengt h, λP Spectral Bandwidth at 50%, Δλ Half Intensity Beam Angle, θ Forward V oltage, VF Reverse Breakdown Voltage, V R Rise Time Fall Time IF = 100mA IF = 20mA IF = 20mA IF = 20mA IF = 100mA IR = 10μA IFP = 50mA IFP = 50mA MIN 30 7 0 5 ABSOLUTE MAXIMUM RATINGS AT 25°C CASE Power Dissipation Continuous Forwa rd Current Peak Forward Current (10μs, 200Hz)1 Reverse Voltage Lead Soldering Temperature (1/16" from case for 10sec ) 1Derate per Thermal Derating Curve ab ove 25°C TYP 40 850 40 80 1.6 30 20 2 0 MAX 2 UNITS mW nm nm Deg Volts Volts nsec nsec 200mW 100mA.

Keywords: OD-850W, datasheet, pdf, OPTO DIODE, HIGH-POWER, GaAlAs, IR, EMITTERS, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

HIGH-POWER GaAlAs IR EMITTERS
OD-850W
FEATURES
High optical output
• 850nm peak emission
• Hermetically sealed TO-46 package
• Wide emision angle to cover a large area
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Caps are
welded to the case.
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
TEST CONDITIONS
Total Power Output, Po
Peak Emission Wavelength, λP
Spectral Bandwidth at 50%, Δλ
Half Intensity Beam Angle, θ
Forward Voltage, VF
Reverse Breakdown Voltage, VR
Rise Time
Fall Time
IF = 100mA
IF = 20mA
IF = 20mA
IF = 20mA
IF = 100mA
IR = 10μA
IFP = 50mA
IFP = 50mA
MIN
30
70
5
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation
Continuous Forward Current
Peak Forward Current (10μs, 200Hz)1
Reverse Voltage
Lead Soldering Temperature (1/16" from case for 10sec)
1Derate per Thermal Derating Curve above 25°C
TYP
40
850
40
80
1.6
30
20
20
MAX
2
UNITS
mW
nm
nm
Deg
Volts
Volts
nsec
nsec
200mW
100mA
300mA
5V
260°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
-40°C to 100°C
Maximum Junction Temperature
100°C
Thermal Resistance, RTHJA1
Thermal Resistance, RTHJA2
400°C/W Typical
135°C/W Typical
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads
2Air circulating at a rapid rate to keep case temperature at 25°C
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
Revision February 26, 2013

     






Index : 0  1  2  3   4  5  6  7   8  9  A  B   C  D  E  F   G  H  I  J   K  L  M  N   O  P  Q  R   S  T  U  V   W  X  Y  Z
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)