SXUV20HS1

PHOTODIODE Ø5 mm SXUV20HS1 FEATURES Circular active area Ideal for EUV detection 100% internal QE High speed Grid lines 5 microns, Pitch 100 microns RoHS and REACH compliant RoHS Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS TEST CONDITIONS Active Area Ø5.01mm Responsivity, R (see graphs on next page) Reverse Breakdown Voltage, VR Capacitance, C Rise Time Dark Current IR = 1µA VR = 0V RL = 50Ω, VR = 150V VR = 150V MIN 160 TYP 19.7 MAX 200 800 2 100 THERMAL PARAMETERS STORAGE AND OPERATING TEMPERATURE RANGE Ambient1 Nitrogen or Vacuum Lead Soldering Temperature2 -10° TO 40°C1 -20°C TO 80°C 260°C 1Temperatures exceeding these parameters may create oxide growth on the active area. Over time responsivity to low energy radiation and wavelengths below 150nm will be compromised. 20.080" from case for 10 seconds. Shipped with temporary cover to protect photodiode and wire bond. Review Opto Diode...