DMC20101
Silicon NPN epitaxial planar type
Unit: mm
For general amplification
Features High forward current transf...
DMC20101
Silicon
NPN epitaxial planar type
Unit: mm
For general amplification
Features High forward current transfer ratio hFE with excellent linearity Low collector-emitter saturation voltage VCE(sat) Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Marking Symbol: A1
Basic Part Number Dual DSC2001 (Common emitter)
Packaging DMC201010R Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Tr1 Tr2
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Total power dissipation
Junction temperature Overall
Operating ambient temperature
Storage temperature
VCBO VCEO VEBO
IC ICP PT Tj Topr Tstg
60 50 7 100 200 300 150 –40 to +85 –55 to +150
Unit V V V mA mA mW °C °C °C
1: Base (Tr1) 2: Emitter (Common) 3: Base (Tr2)
Panasonic JE...