DB2W31900L

DReovcisNioon. . T4 T4-EA-12641 DB2W31900L Silicon epitaxial planar type For rectification  Features  Low forward voltage VF  Low terminal capacitance Ct  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)  Marking Symbol: 3W  Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Reverse voltage (direct current) Forward current (average) *1 Non-repetitive peak forward surge current *2 Junction temperature VR IF(AV) IFSM Tj 30 3 30 125 Operating ambient temperature Topr -40 to +85 Storage temperature Tstg -55 to +125 Note) *1 For embedded alumina substrate (substrate size: 5 cm×5 cm) *2 50 Hz sine wave 1 cycle (Non-repetitive peak current) Unit V A A °C °C °C Product Standards Schottky Barrier Diode DB2W31900L 1.6 2 Unit: mm 0.13 2.6 3.5 1 0.9 0.8 1. Cathode 2. Anode Panasonic JEITA Code Mini2-F3-B SC-109B ― Internal Conn...