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TP65H070L Dataheets PDF



Part Number TP65H070L
Manufacturers Transphorm
Logo Transphorm
Description 650V GaN FET
Datasheet TP65H070L DatasheetTP65H070L Datasheet (PDF)

TP65H070L Series 650V GaN FET PQFN Series Preliminary Description The TP65H070L 650V, 72mΩ Gallium Nitride (GaN) FET are normally-off devices. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge. Related Literature  AN0009: Recommended External Circuitry for GaN FE.

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TP65H070L Series 650V GaN FET PQFN Series Preliminary Description The TP65H070L 650V, 72mΩ Gallium Nitride (GaN) FET are normally-off devices. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge. Related Literature  AN0009: Recommended External Circuitry for GaN FETs  AN0003: Printed Circuit Board Layout and Probing  AN0010: Paralleling GaN FETs Ordering Information Part Number Package TP65H070LDG TP65H070LSG 8 x 8mm PQFN 8 x 8mm PQFN Package Configuration Drain Source TP65H070LDG 8x8 PQFN (bottom view) D S G TP65H070LSG 8x8 PQFN (bottom view) S D G Features  JEDEC qualified GaN technology  Dynamic RDS(on)eff production tested  Robust design, defined by — Intrinsic lifetime tests — Wide gate safety margin — Transient over-voltage capability  Very low QRR  Reduced crossover loss  RoHS compliant and Halogen-free packaging Benefits  Improves efficiency/operation frequencies over Si  Enables AC-DC bridgeless totem-pole PFC designs — Increased power density — Reduced system size and weight — Overall lower system cost  Easy to drive with commonly-used gate drivers  GSD pin layout improves high speed design Applications  Datacom  Broad industrial  PV inverter  Servo motor Key Specifications VDSS (V) V(TR)DSS (V) RDS(on)eff (mΩ) max* 650 800 85 QRR (nC) typ 90 QG (nC) typ 10 * Dynamic on-resistance; see Figures 5 and 6 Cascode Schematic Symbol February 17, 2019 tp65h070l.0 Cascode Device Structure © 2018 Transphorm Inc. Subject to change without notice. 1 TP65H070L Series — Preliminary Absolute Maximum Ratings (Tc=25°C unless otherwise stated.) Symbol Parameter VDSS Drain to source voltage (TJ = -55°C to 150°C) V(TR)DSS Transient drain to source voltage a VGSS Gate to source voltage PD Maximum power dissipation @TC=25°C Continuous drain current @TC=25°C b ID Continuous drain current @TC=100°C b IDM Pulsed drain current (pulse width: 10µs) (di/dt)RDMC Reverse diode di/dt, repetitive c (di/dt)RDMT Reverse diode di/dt, transient d TC Operating temperature TJ TS Storage temperature Case Junction TSOLD Soldering peak temperature e Notes: a. In off-state, spike duty cycle D<0.01, spike duration <1µs b. For increased stability at high current operation, see Circuit Implementation on page 3 c. Continuous switching operation d. ≤300 pulses per second for a total duration ≤20 minutes e. For 10 sec., 1.6mm from the case Limit Value 650 800 ±20 96 25 16 120 1200 2600 -55 to +150 -55 to +150 -55 to +150 260 Unit V W A A A A/µs A/µs °C °C °C °C Thermal Resistance Symbol Parameter Maximum Unit RΘJC Junction-to-case 1.3 °C/W RΘJA Junction-to-ambient f 62 °C/W Notes: f. Device on one layer epoxy PCB for drain connection (vertical and without air stream cooling, with 6cm2 copper area and 70µm thickness) February 17, 2019 tp65h070l.0 transphormusa.com 2 TP65H070L Series — Preliminary Circuit Implementation Simplified Half-bridge Schematic Efficiency vs Output Power Recommended gate drive: (0V, 12V) with RG(tot) = 40-60Ω, where RG(tot) = RG + RDRIVER Gate Ferrite Bead (FB1) Required DC Link RC Snubber (RCDCL) a Recommended Switching Node RC Snubber (RCSN) b, c MMZ1608S181ATA00 [10nF + 8Ω] x 2 33pF + 15Ω Notes: a. RCDCL should be placed as close as possible to the drain pin b. A switching node RC snubber (C, R) is recommended for high switching currents (>70% of IRDMC1 or IRDMC2; see page 5 for IRDMC1 and IRDMC2) c. IRDM values can be increased by increasing RG and CSN February 17, 2019 tp65h070l.0 transphormusa.com 3 TP65H070L Series — Preliminary Electrical Parameter (TJ=25°C unless otherwise stated) Symbol Parameter Min Typ Forward Device Characteristics V(BL)DSS Drain-source voltage VGS(th) Gate threshold voltage RDS(on)eff Drain-source on-resistance a 650 — 3.3 4 — 72 — 148 IDSS Drain-to-source leakage current — 3 — 12 Gate-to-source forward leakage current — — IGSS Gate-to-source reverse leakage current — — CISS Input capacitance COSS Output capacitance CRSS Reverse transfer capacitance — 600 — 90 — 4 CO(er) Output capacitance, energy related b — 135 CO(tr) Output capacitance, time related c — 220 QG Total gate charge QGS Gate-source charge — 10 — 3.5 QGD Gate-drain charge — 3 QOSS Output charge — 85 tD(on) Turn-on delay — 27 tR Rise time — 7.5 tD(off) Turn-off delay — 60 tF Fall time — 5 Notes: a. Dynamic on-resistance; see Figures 5 and 6 for test circuit and conditions b. Equivalent capacitance to give same stored energy as VDS rises from 0V to 400V c. Equivalent capacitance to give same charging time as VDS r.


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