TP65H035WS

TP65H035WS 650V GaN FET in TO-247 (source tab) Description The TP65H035WS 650V, 35mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge. Related Literature  AN0009: Recommended External Circuitry for GaN FETs  AN0003: Printed Circuit Board Layout and Probing  AN0010: Paralleling GaN FETs Ordering Information Part Number Package TP65H035WS 3 lead TO-247 Package Configuration Source TP65H035WS TO-247 (top view) S GS D Cascode Schematic Symbol June 13, 2018 tp65h035w.1 Cascode Device Structure Features  JEDEC qualified GaN technology  Dynamic RDS(on)eff production tested  Robust design, defined by — Intrinsic lifetime tests — Wide gate safety margin — Transient over-vol...