HI3669

HI-SINCERITY MICROELECTRONICS CORP. HI3669 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE9029 Issued Date : 1997.11.14 Revised Date : 2006.02.20 Page No. : 1/4 Description The HI3669 is designed for using in power amplifier applications, power switching application. Absolute Maximum Ratings (TA=25°C) TO-251 Maximum Temperatures Tstg Storage Temperature.................................................................................................................... -55 ~ +150 °C Tj Junction Temperature ................................................................................................................................ +150 °C Maximum Power Dissipation Total Power Dissipation (TA=25°C) ................................................................................................................. 1.25 W Maximum Voltages and Currents BVCBO Collector to Base Breakdown Voltage..................................................................................