Effect Transistor. H01N45A Datasheet

H01N45A Transistor. Datasheet pdf. Equivalent

Part H01N45A
Description N-Channel Power Field Effect Transistor
Feature HI-SINCERITY MICROELECTRONICS CORP. H01N45A N-Channel Power Field Effect Transistor Features • Typi.
Manufacture HI-SINCERITY
Datasheet
Download H01N45A Datasheet

HI-SINCERITY MICROELECTRONICS CORP. H01N45A N-Channel Power H01N45A Datasheet
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H01N45A
HI-SINCERITY
MICROELECTRONICS CORP.
H01N45A
N-Channel Power Field Effect Transistor
Features
Typical RDS(on)=4.1
Extremely High dv/dt Capability
100% Avalanche Tested
Gate Charge Minimized
New High Voltage Benchmark
Applications
Switch Mode Low Power Supplies (SMPS)
Low Power, Low Cost CFL (Compact Fluorescent Lamps)
Low Power Battery Chargers
Absolute Maximum Ratings
Symbol
VDS
VDGR
VGS
ID
ID
IDM
PD
dv/dt
Tj, Tstg
IAR
EAS
Parameter
Drain-Source Voltage (VGS=0)
Drain-Gate Voltage (RGS=20K)
Gate-Source Voltage
Drain Current (Continuous) at TC=25oC
Drain Current (Continuous) at TC=100oC
Drain Current (Pulsed)
Total Power Dissipation at TC=25oC
Derate Factor
Peak Diode recovery Voltage Slope
Operating Junction and Storage Temperature Range
Avalanche Current, Repetitive or Not-Repetitive (Pulse width
limited by TJ Max.)
Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25°C
(VDD=100V, VGS=10V, IL=2A, L=10mH, RG=25)
Thermal Data
Symbol
Rthj-amb
Rthj-lead
TL
Parameter
Thermal Resistance Junction-Ambient (Max.)
Thermal Resistance Junction-Leadt (Max.)
Maximum Lead Temperature for Soldering Purpose
Spec. No. : MOS200408
Issued Date : 2004.11.01
Revised Date : 2005.03.10
Page No. : 1/4
H01N45A Pin Assignment
3-Lead Plastic TO-92
Package Code: A
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
123
D
Symbol: G
S
Value
450
450
±30
0.5
0.315
2
2.5
0.025
3
-65 to 150
1.5
25
Units
V
V
V
A
A
A
W
W/°C
V/ns
°C
A
mJ
Value
120
40
260
Units
oC/W
oC/W
oC
H01N45A
HSMC Product Specification



H01N45A
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200408
Issued Date : 2004.11.01
Revised Date : 2005.03.10
Page No. : 2/4
Electrical Characteristics (Tcase=25°C, unless otherwise specified)
Symbol
Characteristic
Test Conditions
ON/OFF
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
Dynamic
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
(VGS=0)
Gate-Body Leakage Current
(VDS=0)
Gate Threshold Voltage
Static Drain-Source On Resistance
VGS=0V, ID=250uA
VDS=Max. Rating
VDS=Max. Rating, TC=125oC
VGS=±30V
VDS=VGS, ID=250uA
VGS=10V, ID=0.5A
gFS*1
Ciss
Coss
Crss
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching On
VDSID(on)xRDS(on)max., ID=0.5A
VDS=25V, VGS=0V, f=1MHz
td(on) Turn-on Delay Time
tr Rise Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Switching Off
(VDD=225V, ID=0.5A, RG=4.7,
VGS=10V)
(VDS=360V, ID=0.5A, VGS=10V,
RG=4.7)
tr(Voff)
tf
tC
Off-Voltage Rise Time
Fall Time
Cross-Over Time
Source Drain Diode
(VDD=360V, ID=1.5A, RG=4.7,
VGS=10V)
ISD Source-Drain Current
ISDM*2
Source-Drain Current (pulsed)
VSD*1
Forward On Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
*1: Pulse Test: Pulse duration=300us, duty cycle 1.5%
*2: Pulse width limited by safe operating area.
ISD=1.5A, VGS=0
ISD=1.5A, di/dt=100A/us
VDD=100V, TJ=150oC
Min.
450
-
-
-
2.3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ. Max.
--
-1
- 50
- ±100
3 3.7
4.1 4.5
1.1 -
185 230
27.5 -
6 10
6.7 -
4-
14 20
2-
3.2 -
8.5 -
12 -
18 -
- 1.5
-6
- 1.6
225 -
530 -
4.7 -
Unit
V
uA
nA
V
S
pF
ns
nC
ns
A
V
ns
uC
A
H01N45A
HSMC Product Specification





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