H01N45A Datasheet (data sheet) PDF





H01N45A Datasheet, N-Channel Power Field Effect Transistor

H01N45A   H01N45A  

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HI-SINCERITY MICROELECTRONICS CORP. H01N 45A N-Channel Power Field Effect Transi stor Features • Typical RDS(on)=4.1 • Extremely High dv/dt Capability • 100% Avalanche Tested • Gate Char ge Minimized • New High Voltage Bench mark Applications • Switch Mode Low Power Supplies (SMPS) • Low Power, Lo w Cost CFL (Compact Fluorescent Lamps) • Low Power Battery Chargers Absolut e Maximum Ratings Symbol VDS VDGR VGS ID ID IDM PD dv/dt Tj, Tstg IAR EAS Pa rameter Drain-Source Voltage (VGS=0) Dr ain-Gate Voltage (RGS=20KΩ) Gate-Sour ce Voltage Drain Current (Continuous) a t TC=25oC Drain Current (Continuous) at TC=100oC Drain Current (Pulsed) Total Power

H01N45A Datasheet, N-Channel Power Field Effect Transistor

H01N45A   H01N45A  
Dissipation at TC=25oC Derate Factor Pea k Diode recovery Voltage Slope Operatin g Junction and Storage Temperature Rang e Avalanche Current, Repetitive or Not- Repetitive (Pulse width limited by TJ M ax.) Single Pulse Drain-to-Source Avala nche Enrgy-Tj=25°C (VDD=100V, VGS=10V, IL=2A, L=10mH, RG=25Ω) Thermal Data Symbol Rthj-amb








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