IS35ML01G084

IS34ML01G084 IS35ML01G084 1Gb SLC-4b ECC 3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE 1Gb(x8) 3.3V NAND FLASH MEMORY with 4b ECC IS34/35ML01G084 FEATURES  Flexible & Efficient Memory Architecture - Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell  Highest performance - Read Performance - Random Read: 25us (Max.) - Serial Access: 25ns (Max.) - Write Performance - Program time: 300us - typical - Block Erase time: 3ms – typical  Low Power with Wide Temp. Ranges - Single 3.3V (2.7V to 3.6V) Voltage Supply - 15 mA Active Read Current - 10 µA Standby Current - Temp Grades: - Industrial: -40°C to +85°C - Extended: -40°C to +105°C - Automotive, A1: -40°C to +85°C - Automotive, A2: -40°C to +105°C  Reliable CMOS Floating Gate Technology - ECC Requirement: X8 - 4bit/512Byte - Endurance: 100K Program/Erase cycles - Data Retentio...