2Gb(x8/x16) 1.8V NAND FLASH MEMORY
IS34MW02G084/164 IS35MW02G084/164
2Gb SLC-4b ECC
1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND INTERFACE
IS34/35MW02G084/...
Description
IS34MW02G084/164 IS35MW02G084/164
2Gb SLC-4b ECC
1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND INTERFACE
IS34/35MW02G084/164 2Gb(x8/x16) 1.8V NAND FLASH MEMORY with 4b ECC
FEATURES
Flexible & Efficient Memory Architecture
- Memory Cell: 1bit/Memory Cell - Organization: 256Mb x8 /128Mb x16 - X8:
- Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - X16: - - Memory Cell Array: (128M + 4M) x 16bit - - Data Register: (1K + 32) x 16bit - - Page Size: (1K + 32) Byte - - Block Erase: (64K + 2K) Byte
Highest performance - Read Performance
- Random Read: 25us (Max.) - Serial Access: 45ns (Max.)
- Write Performance
- Program time: 300us - typical - Block Erase time: 3ms – typical
Low Power with Wide Temp. Ranges - Single 1.8V (1.7V to 1.95V) Voltage Supply - 15 mA Active Read Current - 10 µA Standby Current - Temp Grades: - Industrial: -40°C to +85°C - Extended: -40°C to +105°C - Automotive, A1: ...
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