1Gb (x8) 3.3V NAND FLASH MEMORY
IS34ML01G081 IS35ML01G081
1Gb SLC-1b ECC
3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE
1Gb (x8) 3.3V NAND FLASH MEM...
Description
IS34ML01G081 IS35ML01G081
1Gb SLC-1b ECC
3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE
1Gb (x8) 3.3V NAND FLASH MEMORY with 1b ECC
IS34/35ML01G081
FEATURES
Flexible & Efficient Memory Architecture
- Organization: 128Mb x8 - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell
Highest performance - Read Performance
- Random Read: 25us (Max.) - Serial Access: 25ns (Max.)
- Write Performance
- Program time: 400us - typical - Block Erase time: 3ms – typical
Low Power with Wide Temp. Ranges - Single 3.3V (2.7V to 3.6V) Voltage Supply - 15 mA Active Read Current - 10 µA Standby Current - Temp Grades: - Industrial: -40°C to +85°C - Extended: -40°C to +105°C - Automotive, A1: -40°C to +85°C - Automotive, A2: -40°C to +105°C
Reliable CMOS Floating Gate Technology
- ECC Requirement: X8 - 1bit/512Byte - Endurance: 100K Program/Erase cycles - Data Retenti...
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