IS35MW01G084

IS34MW01G084/164 IS35MW01G084/164 1Gb SLC-4b ECC 1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND INTERFACE IS34/35MW01G084/164 1Gb (x8/x16) 1.8V NAND FLASH MEMORY with 4b ECC FEATURES  Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 128Mb x8 /64Mb x16 - X8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - X16: - Memory Cell Array: (64M + 2M) x 16bit - Data Register: (1K + 32) x 16bit - Page Size: (1K + 32) Word - Block Erase: (64K + 2K) Word  Highest performance - Read Performance: - Random Read: 25us (Max.) - Serial Access: 45ns (Max.) - Write Performance: - Program time: 300us - typical - Block Erase time: 3ms – typical  Low Power with Wide Temp. Ranges - Single 1.8V (1.7V to 1.95V) Voltage Supply - 15 mA Active Read Current - 10 µA Standby Current - Temp Grades: - Industrial: -40°C to +85°C - Extended: -40°C to +105°C - Automotive, A1: -40°C to +85°C - Automotive, A2: -40°C to +105°C  Efficient Read and Program modes - Command/Address/Data Multiplexed I/O Interface - Command Register Operation - Automatic Page 0 Read at Power-Up Option; - Boot from NAND support - Automatic Memory Download - NOP: 4 cycles - Cache Program/Read Operation - Copy-Back Operation - EDO mode - OTP operation - Bad-Block-Protect  Advanced Security Protection - Hardware Data Protection: - Program/Erase Lockout during Power Transitions  Industry Standard Pin-out & Packag...