PTFC210202FC

PTFC210202FC Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Description The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 t MHz frequency band. Manufactured with Wolfspeed's advanced LDMOS c process, this device provides excellent thermal performance and superior reliability. du Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 170 mA, ƒ = 2170 MHz o 3GPP WCDMA signal, r PAR = 7.5 dB, 3.84 MHz BW p 24 60 d 20 Gain 40 e 16 20 u 12 Efficiency 0 in 8 -20 PAR @ 0.01% CCDF t 4 -40 PTFC210202FC Package H-37248-4 Features Input matched Typical CW performance, 2170 MHz, 28 V, combined outputs - Output power at P1dB = 28 W - Efficiency = 62% - Gain = 20.9 dB Capable of handling 10:1 VSWR @28 V, 28 W (CW) output power Integrated ESD protection : Human Body Model, Class 1C (per JESD22-A114) Low thermal resistance Pb-free and RoHS compliant Peak/Average Ratio, Gain (dB) Efficiency (%) n 0 co 28 ptfc210202fc_g1 -60 32 36 40 44 Average Output Power (dBm) dis RF Characteristics Single-carrier WCDMA Specifications (tested in Wolfspeed test fixture) VDD = 28 V, IDQ = 170 mA, POUT = 5 W avg, ƒ1 = 2160 MHz, ƒ2 = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF Characteristic Linear Gain Drain Efficiency Adjacent Channel Power Ratio Symbol Min Typ Max Unit Gps 20 21 — dB hD 26.5 29 — ...