CMPA801B025

CMPA801B025 25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in a 10-lead metal/ceramic flanged package (CMPA801B025F) or small form- PN: CMPaPcAk8a0g1eBT0y2p5eF:/4C4M02P1A38/014B40022156P factor pill package (CMPA801B025P) for optimal electrical and thermal performance. Typical Performance Over 8.5-11.0 GHz (TC = 25˚C) Parameter 8.5 GHz 10.0 GHz Output Power1 38.0 37.0 Output Power1 45.8 45.7 Power Added Efficiency1 37.0 36.0 Note1: Measured in CMPA801B025F-AMP under 100 uS pulse width, 10% duty. 11.0 GHz 35.5 45.5 35.0 Units...